A study of the carrier dynamics in MOCVD-grown InGaAs/GaAs quantum dots emitting at 1.3 ?m at room temperature has been done. The PL rise time measured as a function of the temperature shows that carrier relaxation into the QD ground state occurs within a few picoseconds due to a very efficient carrier-phonon scattering process. In spite of this very efficient carrier capture in our dots and a small temperature dependence of the quantum efficiency, which are favorable for laser applications, we show that our QDs have a very strong permanent dipole moment which prevents the emission from the ground state and the lasing at 1.3 ?m.
Open issues for lasing at 1.3 ?m in MOCVD-grown quantum dots
De Giorgi M;Passaseo A;Todaro;M T;
2003
Abstract
A study of the carrier dynamics in MOCVD-grown InGaAs/GaAs quantum dots emitting at 1.3 ?m at room temperature has been done. The PL rise time measured as a function of the temperature shows that carrier relaxation into the QD ground state occurs within a few picoseconds due to a very efficient carrier-phonon scattering process. In spite of this very efficient carrier capture in our dots and a small temperature dependence of the quantum efficiency, which are favorable for laser applications, we show that our QDs have a very strong permanent dipole moment which prevents the emission from the ground state and the lasing at 1.3 ?m.File in questo prodotto:
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