An approach to low-cost production of Cu(In,Ga)Se2 (CIGS) solar cells based on pulsed electron deposition (PED) has achieved a crucial milestone. Lab-scale solar cells with efficiencies exceeding 15% were obtained by depositing CIGS from a stoichiometric quaternary target at 270 °C and without any post-growth treatment. An effective control of the p-doping level in CIGS was achieved by starting the PED deposition with a layer of NaF tailored to generate the optimum Na diffusion. These results show that PED is a promising technology for the development of a competitive low-cost production process for CIGS solar cells.

15% efficient Cu(In,Ga)Se2 solar cells obtained by low-temperature pulsed electron deposition

Rampino S;Armani N;Bissoli F;Bronzoni M;Calestani D;Calicchio M;Gilioli E;Gombia E;Mosca R;Nasi L;Pattini F;Zappettini A;Mazzer M
2012

Abstract

An approach to low-cost production of Cu(In,Ga)Se2 (CIGS) solar cells based on pulsed electron deposition (PED) has achieved a crucial milestone. Lab-scale solar cells with efficiencies exceeding 15% were obtained by depositing CIGS from a stoichiometric quaternary target at 270 °C and without any post-growth treatment. An effective control of the p-doping level in CIGS was achieved by starting the PED deposition with a layer of NaF tailored to generate the optimum Na diffusion. These results show that PED is a promising technology for the development of a competitive low-cost production process for CIGS solar cells.
2012
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/239059
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