The initial stages of cobalt disilicide formation on Si(111) and Si(100) surfaces are studied using backscattered electron imaging of the nearsurface atomic structure. Both reactive deposition and solid phase epitaxy are investigated in the coverage range of 1-10 ML of Co. The evidence for CoSi2 island formation at the earliest stages of the process is found. The epitaxial orientations of disilicide layers grown on Si(111) and Si(100) surfaces are determined.
Initial stages of cobalt disilicide formation on silicon single crystals
P Luches;S Valeri
2002
Abstract
The initial stages of cobalt disilicide formation on Si(111) and Si(100) surfaces are studied using backscattered electron imaging of the nearsurface atomic structure. Both reactive deposition and solid phase epitaxy are investigated in the coverage range of 1-10 ML of Co. The evidence for CoSi2 island formation at the earliest stages of the process is found. The epitaxial orientations of disilicide layers grown on Si(111) and Si(100) surfaces are determined.File in questo prodotto:
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