Dislocations induced by high SEM beam currents in GaAs were studied by TEM and emission CL. They were found to consist of bowed segments and confirmed to have [001] Burgers vectors. The capacity of different SEMs to induce dislocations varied greatly. Methods for recording CL contrast profiles and a Monte Carlo based program for CL calculations are presented.

BEAM-INDUCED DISLOCATIONS AND THEIR CL CONTRAST

LAZZARINI L;SALVIATI G;
1993

Abstract

Dislocations induced by high SEM beam currents in GaAs were studied by TEM and emission CL. They were found to consist of bowed segments and confirmed to have [001] Burgers vectors. The capacity of different SEMs to induce dislocations varied greatly. Methods for recording CL contrast profiles and a Monte Carlo based program for CL calculations are presented.
1993
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
0-7503-0290-9
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/239494
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact