Dislocations induced by high SEM beam currents in GaAs were studied by TEM and emission CL. They were found to consist of bowed segments and confirmed to have [001] Burgers vectors. The capacity of different SEMs to induce dislocations varied greatly. Methods for recording CL contrast profiles and a Monte Carlo based program for CL calculations are presented.

BEAM-INDUCED DISLOCATIONS AND THEIR CL CONTRAST

LAZZARINI L;SALVIATI G;
1993

Abstract

Dislocations induced by high SEM beam currents in GaAs were studied by TEM and emission CL. They were found to consist of bowed segments and confirmed to have [001] Burgers vectors. The capacity of different SEMs to induce dislocations varied greatly. Methods for recording CL contrast profiles and a Monte Carlo based program for CL calculations are presented.
1993
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
8th Royal-Microscopical-Society Conference: Microscopy of Semiconducting Materials 1993 (MSM VIII)
0-7503-0290-9
Sì, ma tipo non specificato
2
none
HOLT, DB; NAPCHAN, E; LAZZARINI, L ; SALVIATI, G; URCHULUTEGUI, M
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/239494
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