Ga0.51In0.49P layers, grown by organometallic chemical vapor deposition on differently misoriented (001) GaAs substrates exhibit CuPtB-type domains. The increase in structural homogeneity of the ordered domains, with increasing substrate misorientation, results in a very sharp distribution of the degree of ordering. The correlation between cathodoluminescence emission from ordered regions and changes in surface step distribution direction confirm the influence of the surface morphology on the distribution of ordered regions and their antiphase boundaries
Influence of surface morphology on ordered GaInP structures
L Nasi;G Salviati;M Mazzer;
1996
Abstract
Ga0.51In0.49P layers, grown by organometallic chemical vapor deposition on differently misoriented (001) GaAs substrates exhibit CuPtB-type domains. The increase in structural homogeneity of the ordered domains, with increasing substrate misorientation, results in a very sharp distribution of the degree of ordering. The correlation between cathodoluminescence emission from ordered regions and changes in surface step distribution direction confirm the influence of the surface morphology on the distribution of ordered regions and their antiphase boundariesFile in questo prodotto:
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