The initial stages of the three-dimensional metal organic vapor phase epitaxy growth of InP/GaAs have been studied by atomic force microscopy and Rutherford backscattering. The results are compared with the predictions of an equilibrium model that predicts an in-plane critical size for island formation. At low growth rates the model fits well the experiments while it needs to be further developed to include kinetic effects at higher growth rates. The experiments indicate a Stranski-Krastanow growth mode with a critical thickness of 2.1 ML
InP/GaAs self-assembled nanostructures: Modelization and experiment
M Mazzer;G Rossetto;G Torzo
1996
Abstract
The initial stages of the three-dimensional metal organic vapor phase epitaxy growth of InP/GaAs have been studied by atomic force microscopy and Rutherford backscattering. The results are compared with the predictions of an equilibrium model that predicts an in-plane critical size for island formation. At low growth rates the model fits well the experiments while it needs to be further developed to include kinetic effects at higher growth rates. The experiments indicate a Stranski-Krastanow growth mode with a critical thickness of 2.1 MLFile in questo prodotto:
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