Chromium carbo-nitride coatings with low nitrogen contents have been deposited by low pressure MOCVD using Cr(NEt2)4 as single source precursor. Depositions were carried out in the temperature range 300-520°C either under high vacuum without carrier gas or using a partial pressure of nitrogen or hydrogen as carrier gas. All the films are X-ray amorphous and they exhibit a uniform and specular surface morphology with a metallic shiny aspect. The major volatile by-products were analyzed and a decomposition mechanism is proposed. Preliminary properties of these films are also reported.

MOCVD of Cr-based coatings using Cr(NEt2)4 as single source precursor

Ossola F
1996

Abstract

Chromium carbo-nitride coatings with low nitrogen contents have been deposited by low pressure MOCVD using Cr(NEt2)4 as single source precursor. Depositions were carried out in the temperature range 300-520°C either under high vacuum without carrier gas or using a partial pressure of nitrogen or hydrogen as carrier gas. All the films are X-ray amorphous and they exhibit a uniform and specular surface morphology with a metallic shiny aspect. The major volatile by-products were analyzed and a decomposition mechanism is proposed. Preliminary properties of these films are also reported.
1996
CHIMICA INORGANICA E DELLE SUPERFICI
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
Chemical reactors
Chromium compounds
Decomposition
Hydrogen
Metallorganic chemical vapor deposition
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/240166
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