Au-catalyzed InxGa1-xAs nanowires (NWs) and InxGa1-xAs/GaAs core-shell NWs were grown by molecular beam epitaxy on (1 1 1)B GaAs. The effects of In content, growth temperature, andV/III elemental flux ratios onNWmorphology have been investigated. The structure of the NWs has been characterized by SEM and transmission electronmicroscopy and their optical properties by low-temperature photoluminescence.
InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy
Vincenzo Grillo;Faustino Martelli;Silvia Rubini
2011
Abstract
Au-catalyzed InxGa1-xAs nanowires (NWs) and InxGa1-xAs/GaAs core-shell NWs were grown by molecular beam epitaxy on (1 1 1)B GaAs. The effects of In content, growth temperature, andV/III elemental flux ratios onNWmorphology have been investigated. The structure of the NWs has been characterized by SEM and transmission electronmicroscopy and their optical properties by low-temperature photoluminescence.File in questo prodotto:
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