The thermal stability of the Co/beta-Si3N4/Si(111) interface has been studied by high-resolution photoemission spectroscopy in a temperature range extending from room temperature to 650 degrees C. It is demonstrated the ability of a very thin crystalline buffer layer of silicon nitride to prevent the interfacial reaction between cobalt and silicon at room temperature. The behaviour of the interface at higher temperature shows the formation of cobalt silicides already at 300 degrees C. Moreover, the presence of new components in the decomposition of the photoemission spectra is discussed in the light of the existing literature
Thermal stability of the Co/beta-Si3N4/Si(111) interface: A photoemission study
Roberto Flammini;Paolo Moras
2012
Abstract
The thermal stability of the Co/beta-Si3N4/Si(111) interface has been studied by high-resolution photoemission spectroscopy in a temperature range extending from room temperature to 650 degrees C. It is demonstrated the ability of a very thin crystalline buffer layer of silicon nitride to prevent the interfacial reaction between cobalt and silicon at room temperature. The behaviour of the interface at higher temperature shows the formation of cobalt silicides already at 300 degrees C. Moreover, the presence of new components in the decomposition of the photoemission spectra is discussed in the light of the existing literatureFile in questo prodotto:
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