The application of the focused ion beam (FIB) to the preparation of thin lamellae of Si-based samples for strain analysis by means of convergent beam electron diffraction (CBED) was investigated. The crystal damage induced by the ion beam at the sample surface is expected to influence the pattern quality and the strain analysis too. Repeatable results in the strain measurements were obtained only if a low energy (5 KeV) finishing step was used in the sample preparation. The strain measurement results obtained in patterned structures with different strain amount were also compared with those calculated using a commercial process simulator and with electrical measurements performed on the final devices.

Improved TEM sample preparation by low energy FIB for strain analysis by convergent beam electron diffraction

Balboni R;
2009

Abstract

The application of the focused ion beam (FIB) to the preparation of thin lamellae of Si-based samples for strain analysis by means of convergent beam electron diffraction (CBED) was investigated. The crystal damage induced by the ion beam at the sample surface is expected to influence the pattern quality and the strain analysis too. Repeatable results in the strain measurements were obtained only if a low energy (5 KeV) finishing step was used in the sample preparation. The strain measurement results obtained in patterned structures with different strain amount were also compared with those calculated using a commercial process simulator and with electrical measurements performed on the final devices.
2009
Istituto per la Microelettronica e Microsistemi - IMM
Electron diffraction
Focused ion beams
Semiconductor materials
Strain measurement
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/2418
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