We study the DC magnetron sputtering deposition of AlN on different substrates: (100) resistive Si, Si(3)N(4) on Si and SiO(2) on Si. The growth conditions of such films have been analysed to obtain the best structural and piezoelectric properties on each substrate. We show that, while AlN follows a columnar growth from the early stage of deposition on Si, the non-crystalline nature of Si(3)N(4) and SiO(2) induces an amorphous early growth stage on such substrates. Despite this structural difference, high performances have been obtained by AlN delay lines realised on both Si(3)N(4)/Si and pure resistive Si, providing further flexibility in the development of Si-based technological applications.
Structural and Piezoelectric Properties of DC-Sputtered AlN Films Deposited on Different Si-Based Substrates
Tasco V;De Vittorio M;Passaseo A
2009
Abstract
We study the DC magnetron sputtering deposition of AlN on different substrates: (100) resistive Si, Si(3)N(4) on Si and SiO(2) on Si. The growth conditions of such films have been analysed to obtain the best structural and piezoelectric properties on each substrate. We show that, while AlN follows a columnar growth from the early stage of deposition on Si, the non-crystalline nature of Si(3)N(4) and SiO(2) induces an amorphous early growth stage on such substrates. Despite this structural difference, high performances have been obtained by AlN delay lines realised on both Si(3)N(4)/Si and pure resistive Si, providing further flexibility in the development of Si-based technological applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
