The growth of silicon at 230°C on the silver (100) surface has been studied by Auger Electron Spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Photo Electron Spectroscopy (PES). At this temperature, the growth starts with the formation of one complete monolayer showing a p(3 x 3) superstructure. Beyond, the p(3 x 3) evolves towards a "complex" superstructure (which has not been indexed) corresponding to the formation of silicon islands. Surprisingly, the PES results reveal that Si presents a strong metallic character at least up to 1.7 ML.
Ordered silicon structures on silver (100) at 230°C
Ottaviani C;Cricenti A
2006
Abstract
The growth of silicon at 230°C on the silver (100) surface has been studied by Auger Electron Spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Photo Electron Spectroscopy (PES). At this temperature, the growth starts with the formation of one complete monolayer showing a p(3 x 3) superstructure. Beyond, the p(3 x 3) evolves towards a "complex" superstructure (which has not been indexed) corresponding to the formation of silicon islands. Surprisingly, the PES results reveal that Si presents a strong metallic character at least up to 1.7 ML.File in questo prodotto:
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