We present InGaAs quantum dots (QDs) grown by metal organic chemical vapour deposition in which, by increasing the growth temperature (from 550 up to 610 degrees C), a high emission efficiency beyond 1.3 mu m and narrow linewidth (down to 22 meV at room temperature) can be preserved, with a relevant decrease of defect density. The possibility to grow QDs at higher temperature, close to the cladding growth temperature, allows a strong reduction of the annealing effect when the QDs are inserted in device structures. The spectral blue shift, consequence of this effect, is reduced of 90% in QDs grown at 590 degrees C, with respect to those grown at 550 degrees C, thus providing electroluminescence emission near 1.3 mu m.
Improved performances of 1.3 mu m InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition
Tasco V;Passaseo A
2005
Abstract
We present InGaAs quantum dots (QDs) grown by metal organic chemical vapour deposition in which, by increasing the growth temperature (from 550 up to 610 degrees C), a high emission efficiency beyond 1.3 mu m and narrow linewidth (down to 22 meV at room temperature) can be preserved, with a relevant decrease of defect density. The possibility to grow QDs at higher temperature, close to the cladding growth temperature, allows a strong reduction of the annealing effect when the QDs are inserted in device structures. The spectral blue shift, consequence of this effect, is reduced of 90% in QDs grown at 590 degrees C, with respect to those grown at 550 degrees C, thus providing electroluminescence emission near 1.3 mu m.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
