In electron excited Auger process on crystalline surfaces, diffraction of incident electron beam results in a modulation of the ionisation efficiency within the electron escape depth, leading to a dependence of the emitted intensity on the indicent beam direction. Different layers contribute to the Auger signal, as far as either intensity and lineshape are concerned, with a relative weight that is manly modulated by diffraction process. An angular dependence of the Auger lineshape is therefore observed. We investigated in detail the P LVV and In MNN Auger lineshape dependence on the incidence angle on InP(110) surface.
Lineshape Modulation in Auger Emission From InP(100) by Scattering-Interference of the Primary Beam
A di Bona;
1994
Abstract
In electron excited Auger process on crystalline surfaces, diffraction of incident electron beam results in a modulation of the ionisation efficiency within the electron escape depth, leading to a dependence of the emitted intensity on the indicent beam direction. Different layers contribute to the Auger signal, as far as either intensity and lineshape are concerned, with a relative weight that is manly modulated by diffraction process. An angular dependence of the Auger lineshape is therefore observed. We investigated in detail the P LVV and In MNN Auger lineshape dependence on the incidence angle on InP(110) surface.File in questo prodotto:
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