We present a method for evaluating the spatial inhomogeneity of adsorbate-induced band bending on semiconductors from the substrate core-level lineshape. As a case study we consider the first stages of accumulation layer formation due to K adsorption on the H:Si(111) surface at 300 K. The observed Si 2p core-level lineshape variation is accounted for considering each randomly distributed adatom as a source of a screened Coulomb potential. We determine the coverage dependence of the band-bending distribution, and the parameters characterizing the local K-induced potential.
Evaluation of alkali-induced band-bending inhomogeneity and charge transfer trend from core-level analysis
Pedio M;Larciprete;
2000
Abstract
We present a method for evaluating the spatial inhomogeneity of adsorbate-induced band bending on semiconductors from the substrate core-level lineshape. As a case study we consider the first stages of accumulation layer formation due to K adsorption on the H:Si(111) surface at 300 K. The observed Si 2p core-level lineshape variation is accounted for considering each randomly distributed adatom as a source of a screened Coulomb potential. We determine the coverage dependence of the band-bending distribution, and the parameters characterizing the local K-induced potential.File in questo prodotto:
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