In this paper, we compare the structural information obtained by measuring X-ray diffraction reciprocal space maps and by EXAFS analysis on two Si(1-x)Gex alloys with low (LC) and high (HC) Ge concentration. From the analysis of the X-ray diffraction maps we determined the alloy lattice parameters for the cubic cell (a = 5.58 Å) of the fully relaxed HC sample and for the tetragonal cell (a = 5.43 Å

Combined high resolution X-ray diffraction and EXAFS studies of Si(1-x)Gex heterostructures

P De Padova;R Larciprete;L Ferrari;
1998

Abstract

In this paper, we compare the structural information obtained by measuring X-ray diffraction reciprocal space maps and by EXAFS analysis on two Si(1-x)Gex alloys with low (LC) and high (HC) Ge concentration. From the analysis of the X-ray diffraction maps we determined the alloy lattice parameters for the cubic cell (a = 5.58 Å) of the fully relaxed HC sample and for the tetragonal cell (a = 5.43 Å
1998
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
Crystal lattices
Lattice constants
Semiconducting silicon compounds
Silicon alloys
Surface structure
X ray crystallography
Extended X ray absorption fine structure (EXAFS)
Heterojunctions
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/243786
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