Single wavelength ellipsometry was used to monitor the CVD growth of Si(1-x)Gex alloys on Si and to evaluate the effect of sample irradiation by KrF laser pulses, performed during or after the CVD growth. The information obtained was correlated with AFM analysis results in order to optimize the growth parameters for an improved morphological quality of the alloy layers.
CVD growth and excimer laser processing of SiGe alloys monitored by single wavelength ellipsometry and atomic force microscopy
R Larciprete;
1998
Abstract
Single wavelength ellipsometry was used to monitor the CVD growth of Si(1-x)Gex alloys on Si and to evaluate the effect of sample irradiation by KrF laser pulses, performed during or after the CVD growth. The information obtained was correlated with AFM analysis results in order to optimize the growth parameters for an improved morphological quality of the alloy layers.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
