Influence of the impurities on the resistance response to gas is studied in tin oxide thin film sensors. The kinetics of the response was analysed in the sensors after sharp change in composition of the atmosphere. Experiments were performed at different temperatures from 290 K to about 650K. Surface properties, dependent on the technology, were analysed by XPS and SEM techniques. Correlation between phenomenological parameters of the kinetics and the technology dependent surface properties was described.
Influence of technology on the transient response in metal oxide thin film gas sensors
S Kaciulis;
2002
Abstract
Influence of the impurities on the resistance response to gas is studied in tin oxide thin film sensors. The kinetics of the response was analysed in the sensors after sharp change in composition of the atmosphere. Experiments were performed at different temperatures from 290 K to about 650K. Surface properties, dependent on the technology, were analysed by XPS and SEM techniques. Correlation between phenomenological parameters of the kinetics and the technology dependent surface properties was described.File in questo prodotto:
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