Electric transport and voltage-noise measurements on FeTe 0.5Se0.5 epitaxial thin films are reported. The films were grown by pulsed laser ablation deposition on lanthanum aluminate single crystal substrates, and subsequently patterned by ion beam etching. Several configurations, with different voltage contacts distances and different strip widths, have been measured. At low temperature and current bias, the measured low frequency 1/f noise behaves according to the standard resistance fluctuations model. Conversely, an excess unconventional 1/f noise is observed in the high-temperature region (T > 70\K). The experimental results indicate the existence of an electric field threshold, above which nonlinear fluctuation processes are activated. The results of noise measurements correlate well with the already reported change in sign of the Hall resistance in the same temperature range. Possible correlation between the hole contribution to the electrical transport and nonlinear noise effects observed is discussed. © 2002-2011 IEEE.
Nonlinear conductivity fluctuations in fe-chalcogenide superconductors
Barone;Ca;Pagano;Sa;Adamo;Sarnelli;Bellingeri;Ferdeghini;
2013
Abstract
Electric transport and voltage-noise measurements on FeTe 0.5Se0.5 epitaxial thin films are reported. The films were grown by pulsed laser ablation deposition on lanthanum aluminate single crystal substrates, and subsequently patterned by ion beam etching. Several configurations, with different voltage contacts distances and different strip widths, have been measured. At low temperature and current bias, the measured low frequency 1/f noise behaves according to the standard resistance fluctuations model. Conversely, an excess unconventional 1/f noise is observed in the high-temperature region (T > 70\K). The experimental results indicate the existence of an electric field threshold, above which nonlinear fluctuation processes are activated. The results of noise measurements correlate well with the already reported change in sign of the Hall resistance in the same temperature range. Possible correlation between the hole contribution to the electrical transport and nonlinear noise effects observed is discussed. © 2002-2011 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.