We report on the transport properties of an array of N ~ 30 interconnected Nb nanowires, grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H, which can be both consistently described by quantum tunneling of phase slips. © 2013 AIP Publishing LLC.
Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks
Cirillo;Ca;Carapella;Attanasio;Ca
2013
Abstract
We report on the transport properties of an array of N ~ 30 interconnected Nb nanowires, grown by sputtering on robust porous Si substrates. The analyzed system exhibits a broad resistive transition in zero magnetic field, H, and highly nonlinear V(I) characteristics as a function of H, which can be both consistently described by quantum tunneling of phase slips. © 2013 AIP Publishing LLC.File in questo prodotto:
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