We report on the study of the phase dynamics of high-critical-temperature superconductor Josephson junctions. We realized YBa2Cu3O7-xgrain boundary biepitaxial junctions in the submicron scale using low-loss substrates and analyzed their dissipation by comparing the transport measurements with Monte Carlo simulations. The behavior of the junctions can be fitted using a model based on two quality factors, which results in a frequency-dependent damping. Moreover, our devices can be designed to have Josephson energy of the order of the Coulomb energy. In this unusual energy range, phase delocalization strongly influences the device's dynamics, promoting the transition to a quantum phase diffusion regime. We study the signatures of such a transition by combining the outcomes of Monte Carlo simulations with the analysis of the device's parameters, the critical current, and the temperature behavior of the low-voltage resistance R0.

Resolving the effects of frequency-dependent damping and quantum phase diffusion in YBa2Cu3O7-x Josephson junctions

D Stornaiuolo;D Massarotti;F Tafuri
2013

Abstract

We report on the study of the phase dynamics of high-critical-temperature superconductor Josephson junctions. We realized YBa2Cu3O7-xgrain boundary biepitaxial junctions in the submicron scale using low-loss substrates and analyzed their dissipation by comparing the transport measurements with Monte Carlo simulations. The behavior of the junctions can be fitted using a model based on two quality factors, which results in a frequency-dependent damping. Moreover, our devices can be designed to have Josephson energy of the order of the Coulomb energy. In this unusual energy range, phase delocalization strongly influences the device's dynamics, promoting the transition to a quantum phase diffusion regime. We study the signatures of such a transition by combining the outcomes of Monte Carlo simulations with the analysis of the device's parameters, the critical current, and the temperature behavior of the low-voltage resistance R0.
2013
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/244779
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