The use of a high-electron mobility semiconductor nanowire as transistor channel has recently allowed the extension of the spectral coverage of THz field-effect transistor detectors up to 1.5 THz. In this report, we demonstrate efficient operation of a field-effect transistor detector based on a semiconductor nanowire at a much higher frequency, 2.8 THz, with a responsivity ?5 V/W in a bandwidth ?100 kHz, thus proving the full potential of such approach for the detection of THz quantum cascade lasers. Finally, such a THz sensing system is exploited to perform raster scan transmission imaging, with high spatial resolution, signal-to-noise ratio, and acquisition rate. © 2014 AIP Publishing LLC.

Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire field-effect transistor coupled to a bow-tie antenna

Ravaro M;Locatelli M;Viti L;Ercolani D;Consolino L;Bartalini S;Sorba L;Vitiello MS;De Natale P
2014

Abstract

The use of a high-electron mobility semiconductor nanowire as transistor channel has recently allowed the extension of the spectral coverage of THz field-effect transistor detectors up to 1.5 THz. In this report, we demonstrate efficient operation of a field-effect transistor detector based on a semiconductor nanowire at a much higher frequency, 2.8 THz, with a responsivity ?5 V/W in a bandwidth ?100 kHz, thus proving the full potential of such approach for the detection of THz quantum cascade lasers. Finally, such a THz sensing system is exploited to perform raster scan transmission imaging, with high spatial resolution, signal-to-noise ratio, and acquisition rate. © 2014 AIP Publishing LLC.
2014
Istituto Nazionale di Ottica - INO
Istituto Nanoscienze - NANO
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/247641
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