The use of a high-electron mobility semiconductor nanowire as transistor channel has recently allowed the extension of the spectral coverage of THz field-effect transistor detectors up to 1.5 THz. In this report, we demonstrate efficient operation of a field-effect transistor detector based on a semiconductor nanowire at a much higher frequency, 2.8 THz, with a responsivity ?5 V/W in a bandwidth ?100 kHz, thus proving the full potential of such approach for the detection of THz quantum cascade lasers. Finally, such a THz sensing system is exploited to perform raster scan transmission imaging, with high spatial resolution, signal-to-noise ratio, and acquisition rate. © 2014 AIP Publishing LLC.
Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire field-effect transistor coupled to a bow-tie antenna
Ravaro M;Locatelli M;Viti L;Ercolani D;Consolino L;Bartalini S;Sorba L;Vitiello MS;De Natale P
2014
Abstract
The use of a high-electron mobility semiconductor nanowire as transistor channel has recently allowed the extension of the spectral coverage of THz field-effect transistor detectors up to 1.5 THz. In this report, we demonstrate efficient operation of a field-effect transistor detector based on a semiconductor nanowire at a much higher frequency, 2.8 THz, with a responsivity ?5 V/W in a bandwidth ?100 kHz, thus proving the full potential of such approach for the detection of THz quantum cascade lasers. Finally, such a THz sensing system is exploited to perform raster scan transmission imaging, with high spatial resolution, signal-to-noise ratio, and acquisition rate. © 2014 AIP Publishing LLC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.