In this work we present a study on the compatibility of ZnO with transition-metal-oxides having a perovskite-type crystal structure. , substrates; films with thickness from 40 to 1000 nm were deposited Thin films of ZnO were grown on (00 1)- and (0 1 I)-oriented SrTiO by pulsed laser ablation from a stoichiometric ZnO target in 0, atmosphere (pressure ranging from 10(-5) to 2 X 10(-2) mbar) at substrate temperatures from 550 to 870 degrees C. Epitaxial thin films with high crystalline quality and high mobility values were obtained under optimised conditions. Exploiting the SrTiO3 large dielectric constant, Field Effect Transistors were realized using the substrate as dielectric insulator and depositing a metallic gate electrode on the back of the substrate
Deposition of ZnO thin films on SrTiO3 single-crystal substrates and field effect experiments
Bellingeri E;Pallecchi I;Pellegrino L;Canu G;
2005
Abstract
In this work we present a study on the compatibility of ZnO with transition-metal-oxides having a perovskite-type crystal structure. , substrates; films with thickness from 40 to 1000 nm were deposited Thin films of ZnO were grown on (00 1)- and (0 1 I)-oriented SrTiO by pulsed laser ablation from a stoichiometric ZnO target in 0, atmosphere (pressure ranging from 10(-5) to 2 X 10(-2) mbar) at substrate temperatures from 550 to 870 degrees C. Epitaxial thin films with high crystalline quality and high mobility values were obtained under optimised conditions. Exploiting the SrTiO3 large dielectric constant, Field Effect Transistors were realized using the substrate as dielectric insulator and depositing a metallic gate electrode on the back of the substrateI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.