Lasing action has been demonstrated at blue wavelengths in vertical cavity surface-emitting Lasers at room temperature. The microcavity was formed by sandwiching indium gallium nitride multiple quantum wells between nitride-based and oxide-based quarter-wave reflectors. Lasing action was observed at a wavelength of 399 nanometers under optical excitation and confirmed by a narrowing of the Linewidth in the emission spectra from 0.8 nanometer below threshold to Less than 0.1 nanometer (resolution limit) above threshold. The result suggests that practical blue vertical cavity surface-emitting lasers can be realized in gallium-nitride-based material systems.

Room Temperature Lasing at Blue Wavelengths in Gallium Nitride Microcavities

M Catalano;
1999

Abstract

Lasing action has been demonstrated at blue wavelengths in vertical cavity surface-emitting Lasers at room temperature. The microcavity was formed by sandwiching indium gallium nitride multiple quantum wells between nitride-based and oxide-based quarter-wave reflectors. Lasing action was observed at a wavelength of 399 nanometers under optical excitation and confirmed by a narrowing of the Linewidth in the emission spectra from 0.8 nanometer below threshold to Less than 0.1 nanometer (resolution limit) above threshold. The result suggests that practical blue vertical cavity surface-emitting lasers can be realized in gallium-nitride-based material systems.
1999
STRUCTURE LASER-DIODES; PULSED OPERATION
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/248543
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