Semiconducting iron silicide dots with dimensions ranging between 5 and 100 nm can be obtained by ion implantation on Si wafers and exhibit interesting photo- and electro- luminescent properties. In our study we use structural and optical characterization as well as theoretical modelling in order to: i) discriminate among intrinsic effects of FeSi2 dots and effects due to lattice damage and Si matrix; ii) identify the range of physical parameters (size, phase, electronic structure) corresponding to the luminescent dots.
Properties of ion beam synthesized iron disilicide dots
C Spinella;
2000
Abstract
Semiconducting iron silicide dots with dimensions ranging between 5 and 100 nm can be obtained by ion implantation on Si wafers and exhibit interesting photo- and electro- luminescent properties. In our study we use structural and optical characterization as well as theoretical modelling in order to: i) discriminate among intrinsic effects of FeSi2 dots and effects due to lattice damage and Si matrix; ii) identify the range of physical parameters (size, phase, electronic structure) corresponding to the luminescent dots.File in questo prodotto:
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