The formation energy and stability of radical anions in a series of 12 phenyl- and 2-thienyl-ended linear, symmetric azomethines and azines were investigated by cyclic voltammetry. Replacing 1,4-phenylene with 2,5-thienylene cores and substitution with cyano or methyl moieties have allowed the lowering of lowest unoccupied molecular orbital energy levels even by 1 eV. Methyl capping stabilizes electron carriers (radical anions) toward dimerization, and the mechanism of such radical anion dimerization has been clarified by cyclic voltammetric kinetic analysis. The results have been compared with optical parameters and supported by density functional theory calculations. © 2014 American Chemical Society.

Phenyl- and thienyl-ended symmetric azomethines and azines as model compounds for n-channel organic field-effect transistors: An electrochemical and computational study

Vercelli B;Pasini M;Berlin A;
2014

Abstract

The formation energy and stability of radical anions in a series of 12 phenyl- and 2-thienyl-ended linear, symmetric azomethines and azines were investigated by cyclic voltammetry. Replacing 1,4-phenylene with 2,5-thienylene cores and substitution with cyano or methyl moieties have allowed the lowering of lowest unoccupied molecular orbital energy levels even by 1 eV. Methyl capping stabilizes electron carriers (radical anions) toward dimerization, and the mechanism of such radical anion dimerization has been clarified by cyclic voltammetric kinetic analysis. The results have been compared with optical parameters and supported by density functional theory calculations. © 2014 American Chemical Society.
2014
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
Istituto di Scienze e Tecnologie Molecolari - ISTM - Sede Milano
Istituto per lo Studio delle Macromolecole - ISMAC - Sede Milano
ACETOPH
OLIGOMERS
POLYAZOMETHINES
SEMICONDUCTORS
DIMERIZATION
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Descrizione: Phenyl- and thienyl-ended symmetric azomethines and azines as model compounds for n-channel organic field-effect transistors
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/249199
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