The deposition kinetics for MOCVD film growth of Al2O3 was investigated in a range of common process parameters during laminar flow in horizontal hot wall tubular reactor. Particular attention was paid to the relationship between growth rate and reactor dimensions as well as process temperature. The development of the modeling procedure permitted to predict growth rates and precursor concentrations at different experimental conditions.
MOCVD film growth of Al2O3 inside hot wall tubular reactor
R Gerbasi;
2004
Abstract
The deposition kinetics for MOCVD film growth of Al2O3 was investigated in a range of common process parameters during laminar flow in horizontal hot wall tubular reactor. Particular attention was paid to the relationship between growth rate and reactor dimensions as well as process temperature. The development of the modeling procedure permitted to predict growth rates and precursor concentrations at different experimental conditions.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
prod_61626-doc_12804.pdf
solo utenti autorizzati
Descrizione: MOCVD film growth of Al2O3 inside hot wall tubular reactor
Dimensione
102 kB
Formato
Adobe PDF
|
102 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
