Radioactive 57Mn isotopes have been implanted into Si1 - x Ge x crystals (x <= 0.1) at elevated temperatures for Mössbauer studies of the diffusion of interstitial 57Fe daughter atoms. The atomic jump frequency is found to increase upon Ge alloying. This is attributed to a lowering of the activation energy, i.e. the saddle point energy at hexagonal interstitial sites with Ge neighbour atoms.

Acceleration of Diffusional Jumps of Interstitial Fe with Increasing Ge Concentration in Si1-x Gex Alloys Observed by Mössbauer Spectroscopy

R Mantovan;
2004

Abstract

Radioactive 57Mn isotopes have been implanted into Si1 - x Ge x crystals (x <= 0.1) at elevated temperatures for Mössbauer studies of the diffusion of interstitial 57Fe daughter atoms. The atomic jump frequency is found to increase upon Ge alloying. This is attributed to a lowering of the activation energy, i.e. the saddle point energy at hexagonal interstitial sites with Ge neighbour atoms.
2004
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/250709
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