Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at similar to 370 cm(-1) related to substitutional Al atoms. Furthermore, a clear relationship between the Ge-Ge Raman peak at similar to 300 cm(-1) and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors.
Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy
Napolitani E;Impellizzeri G;Privitera V;
2013
Abstract
Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at similar to 370 cm(-1) related to substitutional Al atoms. Furthermore, a clear relationship between the Ge-Ge Raman peak at similar to 300 cm(-1) and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors.File in questo prodotto:
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