In this work it is suggested that surface diffusion phenomena, used by some authors(1,2) to explain the initial phase of diamond deposition and nuclei formation, are not so compulsory to explain the observed growth kinetics. A nuclei surface-vapour interface reaction limited process could instead be the phenomenon mainly responsible of the nuclei growth, primarily when strong covalent bonds are formed between the substrate and the nutrient species, like in diamond deposition on Silicon.
: CVD diamond single particle growth, particle size distribution and nuclei interaction in heterogeneous nucleation
1998
Abstract
In this work it is suggested that surface diffusion phenomena, used by some authors(1,2) to explain the initial phase of diamond deposition and nuclei formation, are not so compulsory to explain the observed growth kinetics. A nuclei surface-vapour interface reaction limited process could instead be the phenomenon mainly responsible of the nuclei growth, primarily when strong covalent bonds are formed between the substrate and the nutrient species, like in diamond deposition on Silicon.File in questo prodotto:
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