We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 degrees C. The low-temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue-emitting nanowires have been obtained. The growth mecha- nism is discussed with the help of in-situ and ex-situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO-coated glasses, demonstrating that ZnSe nanowires are optimal candidates for transparent optoelectronics. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Strong blue emission from ZnSe nanowires grown at low temperature
Zannier Valentina;Martelli Faustino;Grillo Vincenzo;Rubini Silvia
2014
Abstract
We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 degrees C. The low-temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue-emitting nanowires have been obtained. The growth mecha- nism is discussed with the help of in-situ and ex-situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO-coated glasses, demonstrating that ZnSe nanowires are optimal candidates for transparent optoelectronics. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
