In the framework of Transverse Nonlinear Optics and Optical Pattern Formation, we study the formation of cavity solitons (CS) in semiconductor microcavities. We adopt a microscopic model that describes the field and carrier dynamics in the quasi-equilibrium regime, within the free-carrier approximation, with the Urbach tail and the bandgap renormalization, taken into account in a phenomenological way. We numerically predict the formation of patterns in the transverse profile of the output field, in specific range of parameters.
Cavity Spatial Solitons in Semiconductor Microcavities
L Spinelli
2001
Abstract
In the framework of Transverse Nonlinear Optics and Optical Pattern Formation, we study the formation of cavity solitons (CS) in semiconductor microcavities. We adopt a microscopic model that describes the field and carrier dynamics in the quasi-equilibrium regime, within the free-carrier approximation, with the Urbach tail and the bandgap renormalization, taken into account in a phenomenological way. We numerically predict the formation of patterns in the transverse profile of the output field, in specific range of parameters.File in questo prodotto:
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