In this paper, we report the effect of 1.5 MeV proton beam irradiation dose on the structural and electrical properties of TiO2 thin films deposited on n-Si substrates. The formation and transformation of different TiO2 phases in the irradiated thin films were characterized by X-ray diffraction and X-ray photoelectron spectroscopy (XPS). X-ray diffraction measurements revealed that the as grown film was rich in Ti5O9 phase and then converted to mixed phases of TiO2 (rutile and anatase) after exposure with radiation doses up to 5 x 10(14) cm(-2). The XPS results revealed the formation of oxygen vacancy (negative) traps in the exposed TiO2 films, which showed strong dependence on the dose. The C-V measurements showed that proton radiations also damaged the Si substrate and created deep level defects in the substrate, which caused a shift of 0.26 +/- 0.01V in the flat band voltage (V-FB). I-V measurements showed that the ideality factor increased and the rectification ratio dropped with the increase in the radiation dose. The present study showed the stability of TiO2/Si interface and TiO2 film as an oxide layer against proton radiations. (C) 2014 AIP Publishing LLC.
1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface
Cepek Cinzia
2014
Abstract
In this paper, we report the effect of 1.5 MeV proton beam irradiation dose on the structural and electrical properties of TiO2 thin films deposited on n-Si substrates. The formation and transformation of different TiO2 phases in the irradiated thin films were characterized by X-ray diffraction and X-ray photoelectron spectroscopy (XPS). X-ray diffraction measurements revealed that the as grown film was rich in Ti5O9 phase and then converted to mixed phases of TiO2 (rutile and anatase) after exposure with radiation doses up to 5 x 10(14) cm(-2). The XPS results revealed the formation of oxygen vacancy (negative) traps in the exposed TiO2 films, which showed strong dependence on the dose. The C-V measurements showed that proton radiations also damaged the Si substrate and created deep level defects in the substrate, which caused a shift of 0.26 +/- 0.01V in the flat band voltage (V-FB). I-V measurements showed that the ideality factor increased and the rectification ratio dropped with the increase in the radiation dose. The present study showed the stability of TiO2/Si interface and TiO2 film as an oxide layer against proton radiations. (C) 2014 AIP Publishing LLC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
