The conduction and valence band structure of high-purity 4H-SiC epilayers have been studied by surface photovoltage spectroscopy (SPS). A comparison between defect-free and single-layer stacking fault affected areas is reported. Electronic transitions, determined by SPS, are in good agreement with ab initio calculations. Electronic transitions and changes in band occupation have been observed in stacking fault rich areas below the band gap. Moreover, stacking faults induce the presence of a split-off band below the conduction band and a modification of the electron density of states in the conduction band always at the M point. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

4H-SiC band structure investigated by surface photovoltage spectroscopy

Fabbri F;
2012

Abstract

The conduction and valence band structure of high-purity 4H-SiC epilayers have been studied by surface photovoltage spectroscopy (SPS). A comparison between defect-free and single-layer stacking fault affected areas is reported. Electronic transitions, determined by SPS, are in good agreement with ab initio calculations. Electronic transitions and changes in band occupation have been observed in stacking fault rich areas below the band gap. Moreover, stacking faults induce the presence of a split-off band below the conduction band and a modification of the electron density of states in the conduction band always at the M point. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
2012
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Silicon carbide
Band structure
Stacking fault
Intrinsic defect
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/254382
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