In this work we report the morphological, structural and luminescence properties of HfO2 nanocrystals grown on the surface of SiC/SiO2 core/shell nanowires by atomic layer deposition. All the studies are carried out in comparison with HfO2 nanocrystal aggregates grown on planar oxidized silicon substrates. The structural analyses reveal that HfO2 has monoclinic structure with different orientations. The cathodoluminescence emission shows the main components at 2.7 and 2.3 eV, deeply influenced by the arrangement and aggregation of the nanocrystals. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Structural and luminescence properties of HfO2 nanocrystals grown by atomic layer deposition on SiC/SiO2 core/shell nanowires

Rossi Francesca;Fabbri Filippo;Attolini Giovanni;Salviati Giancarlo
2013

Abstract

In this work we report the morphological, structural and luminescence properties of HfO2 nanocrystals grown on the surface of SiC/SiO2 core/shell nanowires by atomic layer deposition. All the studies are carried out in comparison with HfO2 nanocrystal aggregates grown on planar oxidized silicon substrates. The structural analyses reveal that HfO2 has monoclinic structure with different orientations. The cathodoluminescence emission shows the main components at 2.7 and 2.3 eV, deeply influenced by the arrangement and aggregation of the nanocrystals. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
2013
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Silicon carbide
Silicon dioxide
Nanowires
Hafnium oxide
Nanocrystals
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/254600
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