We show how extended X-ray absorption fine structure in total reflection geometry (ReflEXAFS) can be effective in determining the structure of InxGa(1-x)As dots grown on GaAs. In particular, by comparing theoretical models to experimental data on first shell bond lengths, it is possible to recognize the strained or relaxed state of the dots as well as their composition.
InxGa(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS)
d'Acapito F;Colonna S;
2003
Abstract
We show how extended X-ray absorption fine structure in total reflection geometry (ReflEXAFS) can be effective in determining the structure of InxGa(1-x)As dots grown on GaAs. In particular, by comparing theoretical models to experimental data on first shell bond lengths, it is possible to recognize the strained or relaxed state of the dots as well as their composition.File in questo prodotto:
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