In this contribution a review on the studies based on X-ray absorption spectroscopy (XAS) on III-V and II-VI nanowires in the recent years is presented. Examples of structural characterization of several systems like pure semiconductors (mainly ZnO, ZnS, GaN) and doped materials (with transition metals Co, Mn, Fe and rare earth ions Eu, Er) are presented. XAS in the various cases has played a major role in explaining the observed physical properties or to validate new production routes. Advanced data collection and analysis methods like micro-XAS, site selective XAS via optical emission, comparison between XAS and results of structural modeling have demonstrated to be valuable tools for a more complete understanding of the XAS data.
Cap. 13: Group III-V and II-VI nanowires
francesco d'acapito
2014
Abstract
In this contribution a review on the studies based on X-ray absorption spectroscopy (XAS) on III-V and II-VI nanowires in the recent years is presented. Examples of structural characterization of several systems like pure semiconductors (mainly ZnO, ZnS, GaN) and doped materials (with transition metals Co, Mn, Fe and rare earth ions Eu, Er) are presented. XAS in the various cases has played a major role in explaining the observed physical properties or to validate new production routes. Advanced data collection and analysis methods like micro-XAS, site selective XAS via optical emission, comparison between XAS and results of structural modeling have demonstrated to be valuable tools for a more complete understanding of the XAS data.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
