The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 °C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains.
ON THE ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE DIAMOND FILMS ON SILICON
1995
Abstract
The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 °C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
