Nitric oxide interaction with 3CSiC(100)3×2 and Si-3×2/3CSiC(100)3×2 surfaces is investigated by synchrotron radiation-based core level photoemission spectroscopy. At 25 °C, NO exposures result in oxynitride formation, while annealing at 1000 °C removes oxygen leading to a nitride layer. Most interestingly, the results suggest stoichiometric Si3N4 layer formation at Si-3×2/3CSiC(100)3×2 interface. This finding is of interest in limiting dopant diffusion and in defect passivation so critical at insulator/SiC interfaces.
Initial nitride formation at Si/3C SiC(100)3×2 interface by oxynitridation
Moras P;Crotti C;Perfetti P
2005
Abstract
Nitric oxide interaction with 3CSiC(100)3×2 and Si-3×2/3CSiC(100)3×2 surfaces is investigated by synchrotron radiation-based core level photoemission spectroscopy. At 25 °C, NO exposures result in oxynitride formation, while annealing at 1000 °C removes oxygen leading to a nitride layer. Most interestingly, the results suggest stoichiometric Si3N4 layer formation at Si-3×2/3CSiC(100)3×2 interface. This finding is of interest in limiting dopant diffusion and in defect passivation so critical at insulator/SiC interfaces.File in questo prodotto:
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