We present scanning tunneling microscopy (STM) measurements at the TaSe2 surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements.
Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface
Colonna S;Ronci F;Cricenti A;
2006
Abstract
We present scanning tunneling microscopy (STM) measurements at the TaSe2 surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
