This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 ?m Bipolar CMOS DMOS (BCD) technology on 8" silicon wafer. An amorphous magnetic film with a thickness of 1?m, coercitive field Hc<10A/m and saturation magnetization (?0MS) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.
Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator
F Casoli;P Ranzieri;F Albertini;
2013
Abstract
This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 ?m Bipolar CMOS DMOS (BCD) technology on 8" silicon wafer. An amorphous magnetic film with a thickness of 1?m, coercitive field Hc<10A/m and saturation magnetization (?0MS) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
