Capacitance-Voltage characteristics of a metal-semiconductor-metal structure with an embedded two-dimensional electron system are reported. The device functions based on a quantum capacitance, which is activated by local illumination. The giant sensitivity to light and voltage makes this device a candidate for capacitive-based photodetection. © OSA 2013.

A light-activated quantum capacitance device as a highly tunable variable capacitor

Persano Anna;Cola Adriano;
2013

Abstract

Capacitance-Voltage characteristics of a metal-semiconductor-metal structure with an embedded two-dimensional electron system are reported. The device functions based on a quantum capacitance, which is activated by local illumination. The giant sensitivity to light and voltage makes this device a candidate for capacitive-based photodetection. © OSA 2013.
2013
Istituto per la Microelettronica e Microsistemi - IMM
9781557529879
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/261241
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