The thermal properties of two different compositions (Te 12 and 17 at.%) of In-Sb-Te, obtained by metalorganic chemical vapour deposition, were investigated by the 3 omega method. The thermal conductivity of these chalcogenides, of interest for phase change memory applications, was found to decrease with increasing tellurium content. Thermal treatment at 480 degrees C of these materials caused an increase of their crystallinity and improved the thermal conductivity. However, this effect was more marked in the Te-poor composition than in the Te-rich one. In addition, the thermal boundary resistance between In-Sb-Te and various capping dielectrics (SiO2, Si3N4 and Al2O3) was measured and it was found to be closely correlated to the interlayer roughness, as indicated by X-ray reflectivity. In this regard, silicon oxide and alumina yielded a smoother and less resistive interface with In-Sb-Te than silicon nitride. (C) 2013 Elsevier B.V. All rights reserved.
Thermal properties of In-Sb-Te films and interfaces for phase change memory devices
Wiemer Claudia;Cianci Elena;Longo Massimo;
2014
Abstract
The thermal properties of two different compositions (Te 12 and 17 at.%) of In-Sb-Te, obtained by metalorganic chemical vapour deposition, were investigated by the 3 omega method. The thermal conductivity of these chalcogenides, of interest for phase change memory applications, was found to decrease with increasing tellurium content. Thermal treatment at 480 degrees C of these materials caused an increase of their crystallinity and improved the thermal conductivity. However, this effect was more marked in the Te-poor composition than in the Te-rich one. In addition, the thermal boundary resistance between In-Sb-Te and various capping dielectrics (SiO2, Si3N4 and Al2O3) was measured and it was found to be closely correlated to the interlayer roughness, as indicated by X-ray reflectivity. In this regard, silicon oxide and alumina yielded a smoother and less resistive interface with In-Sb-Te than silicon nitride. (C) 2013 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
