This chapter reviews the various strategies for scaling down phase change materials to improve device performance. It reviews the advantages of phase change nanowires (PC-NWs), top-down and bottom-up fabrication processes and characterisation techniques; technological aspects are also considered. Special focus is placed on the self-assembly of NWs by the vapour-liquid-solid mechanisms, including metalorganic chemical vapour deposition. The compositional and structural analysis of NWs is reviewed.

Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques

Longo M
2014

Abstract

This chapter reviews the various strategies for scaling down phase change materials to improve device performance. It reviews the advantages of phase change nanowires (PC-NWs), top-down and bottom-up fabrication processes and characterisation techniques; technological aspects are also considered. Special focus is placed on the self-assembly of NWs by the vapour-liquid-solid mechanisms, including metalorganic chemical vapour deposition. The compositional and structural analysis of NWs is reviewed.
2014
Istituto per la Microelettronica e Microsistemi - IMM
978-0-85709-803-0
nanowires
1D structures
phase change memory
chalcogenide materials
nanoscaling
power consumption
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/262717
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