A series of Silicon crystal undulator samples were produced based on the approach presented in PRL 90 (2003) 034801, with the periods of undulation from 0. 1 mm to 1 mm, and the number of periods on the order of 10. The samples were characterized by X-rays, revealing the sine-like shape of the crystal lattice in the bulk. Next step in the characterization has been the channeling tests done with 70 GeV protons, where good channeling proper-ties of the undulated Silicon lattice have been observed. The photon radiation tests of crystal undulators with high energy positrons are in progress on several locations: IHEP Protvino, LNF Frascati, and CERN SPS. The progress in the experimental activities and the predictions from detailed simulations are reported.
Accelerator tests of crystal undulators
Stefancich M;
2006
Abstract
A series of Silicon crystal undulator samples were produced based on the approach presented in PRL 90 (2003) 034801, with the periods of undulation from 0. 1 mm to 1 mm, and the number of periods on the order of 10. The samples were characterized by X-rays, revealing the sine-like shape of the crystal lattice in the bulk. Next step in the characterization has been the channeling tests done with 70 GeV protons, where good channeling proper-ties of the undulated Silicon lattice have been observed. The photon radiation tests of crystal undulators with high energy positrons are in progress on several locations: IHEP Protvino, LNF Frascati, and CERN SPS. The progress in the experimental activities and the predictions from detailed simulations are reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
