Upon submonolayer deposition of silicon onto the anisotropic silver (110) surface flat lying individual Si nanowires, all oriented along the [-110] direction, can be grown at room temperature with a high aspect ratio. Upon deposition at about 200C, these one - dimensional nanostructures self-assemble by lateral compaction to form a regular array of essentially identical nanowires, about 1.6 nm in width, covering uniformly the entire substrate surface. They realize, at macroscopic sizes, a highly perfect one-dimensional grating with a molecular-scale pitch of just 2 nm.

Formation of a one-dimensional grating at the molecular scale by self-assembly of straight silicon nanowires

Ronci F
2007

Abstract

Upon submonolayer deposition of silicon onto the anisotropic silver (110) surface flat lying individual Si nanowires, all oriented along the [-110] direction, can be grown at room temperature with a high aspect ratio. Upon deposition at about 200C, these one - dimensional nanostructures self-assemble by lateral compaction to form a regular array of essentially identical nanowires, about 1.6 nm in width, covering uniformly the entire substrate surface. They realize, at macroscopic sizes, a highly perfect one-dimensional grating with a molecular-scale pitch of just 2 nm.
2007
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/26439
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