Arrays of Au/NiOx/Ni/Au nanowires with a diameter of 50 nm were characterized by conductive atomic force microscopy, which was used to probe the electrical behavior of single nanowires still included in the array. A bipolar switching of the single Au/NiOx/Ni/Au nanowires is demonstrated and is attributed to the choice of an asymmetric couple of electrode materials and, possibly, to a non-uniform Ni oxidation profile inside the NiOx segments. An analysis of the conduction mechanism in a single nanowire is presented to further support this conclusion.

Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires

Brivio S;Tallarida G;Spiga S
2013

Abstract

Arrays of Au/NiOx/Ni/Au nanowires with a diameter of 50 nm were characterized by conductive atomic force microscopy, which was used to probe the electrical behavior of single nanowires still included in the array. A bipolar switching of the single Au/NiOx/Ni/Au nanowires is demonstrated and is attributed to the choice of an asymmetric couple of electrode materials and, possibly, to a non-uniform Ni oxidation profile inside the NiOx segments. An analysis of the conduction mechanism in a single nanowire is presented to further support this conclusion.
2013
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
103
5
153506
Sì, ma tipo non specificato
6
info:eu-repo/semantics/article
262
Brivio, S; Perego, D; Tallarida, G; Bestetti, M; Franz, S; Spiga, S
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/265756
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