We report the discovery of a nearly-free electronlike resonant state for a ?-Si3N4(0001)-8×8 layer grown on Si(111), as observed by angle-resolved photoemission and scanning tunneling spectroscopy. Comparison with measurements performed on a Si(111)-7×7 surface helped us in the identification of the band. It is found that this parabolic state is degenerate with surface projected bulk bands of the Si(111) substrate.

Nearly-free electronlike surface resonance of a beta-Si3N4(0001)/Si(111)-8 × 8 interface

R Flammini;P Allegrini;F Ronci;S Colonna;D M Trucchi;F Filippone;P M Sheverdyaeva;P Moras
2015

Abstract

We report the discovery of a nearly-free electronlike resonant state for a ?-Si3N4(0001)-8×8 layer grown on Si(111), as observed by angle-resolved photoemission and scanning tunneling spectroscopy. Comparison with measurements performed on a Si(111)-7×7 surface helped us in the identification of the band. It is found that this parabolic state is degenerate with surface projected bulk bands of the Si(111) substrate.
2015
Istituto di fotonica e nanotecnologie - IFN
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
SILICON-NITRIDE; SI(111) SURFACE; MICROSCOPY; FILMS; SEMICONDUCTORS; BETA-SI3N4; GROWTH
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/270132
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