Ultrathin manganite films are widely used as active electrodes in organic spintronic devices. In this study, a scanning tunnelling microscopy (STM) investigation with atomic resolution revealed previously unknown surface features consisting of small non-stoichiometric islands. Based upon this evidence, a new mechanism for the growth of these complex materials is proposed. It is suggested that the non-stoichiometric islands result from nucleation centres that are below the critical threshold size required for stoichiometric crystalline growth. These islands represent a kinetic intermediate of single-layer growth regardless of the film thickness, and should be considered and possibly controlled in manganite thin-film applications.

Surface nanostructures in manganite films

Graziosi Patrizio;Bergenti Ilaria;Milita Silvia;Dediu Valentin Alek
2014

Abstract

Ultrathin manganite films are widely used as active electrodes in organic spintronic devices. In this study, a scanning tunnelling microscopy (STM) investigation with atomic resolution revealed previously unknown surface features consisting of small non-stoichiometric islands. Based upon this evidence, a new mechanism for the growth of these complex materials is proposed. It is suggested that the non-stoichiometric islands result from nucleation centres that are below the critical threshold size required for stoichiometric crystalline growth. These islands represent a kinetic intermediate of single-layer growth regardless of the film thickness, and should be considered and possibly controlled in manganite thin-film applications.
2014
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
Inglese
4
http://www.scopus.com/record/display.url?eid=2-s2.0-84902842853&origin=inward
Applied physic
interfaces and thin films
8
info:eu-repo/semantics/article
262
Gambardella, Alessandro; Graziosi, Patrizio; Bergenti, Ilaria; Prezioso, Mirko; Pullini, Daniele; Milita, Silvia; Biscarini, Fabio; Dediu Valentin, Al...espandi
01 Contributo su Rivista::01.01 Articolo in rivista
none
   Interfacing Oxides
   IFOX
   FP7
   246102
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/273922
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